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Internship

Intern - Advanced DRAM Cell & Device Technology

Micron

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Hours
Full time
Where
Boise, ID - Main Site
Posted
Sep 2

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

At Micron's Boise R&D site, the DRAM Technology Development organization drives innovation in next-generation memory solutions. The team develops advanced DRAM cell architectures, access devices, materials systems, and integration technologies that enable future scaling, improved performance, enhanced reliability, and manufacturing readiness.

What you'd do

  • Support the evaluation of DRAM access devices, capacitors, and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes.
  • Design and implement silicon experiments; perform electrical, physical, and materials characterization along with statistical analysis to find opportunities for device, process, and design improvements.
  • Analyze device- and array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, leakage behavior, and read/write operation interactions.
  • Collaborate with modeling, design, process integration, and manufacturing teams to understand device behavior, support technology optimization, and contribute to technology development activities.
  • Apply AI-Assisted and Generative AI tools, where appropriate, to enhance data analysis, workflow efficiency, and technical decision-making.

What they want

  • Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field. Cannot graduate prior to September 2027.
  • Demonstrated understanding of semiconductor fundamentals, including device physics, materials science, characterization techniques, and concepts relevant to advanced memory technologies.
  • Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental or simulation data sets.
  • Familiarity with DRAM operational concepts, including activation, sensing, retention, and disturb mechanisms.
  • Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms, along with familiarity with AI-assisted engineering and data analysis tools.
Starts
2026-09-02